Premium
Impact of n‐type doping on the terahertz surface emission from c ‐plane InN
Author(s) -
Polyakov V. M.,
Cimalla V.,
Lebedev V.,
Schwierz F.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983539
Subject(s) - terahertz radiation , doping , electric field , electron , dipole , field electron emission , materials science , condensed matter physics , monte carlo method , atomic physics , physics , optoelectronics , statistics , mathematics , quantum mechanics
We theoretically investigate the influence of n‐type doping on the terahertz (THz) electric field emission from unbiased c ‐plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n‐type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping‐derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface.