Defects in highly Mg‐doped AlN | Zendy

aka Kentaro | Zendy; Asai Toshiaki | Zendy; Nagamatsu Kentaro | Zendy; Iwaya Motoaki | Zendy; Kamiyama Satoshi | Zendy; Amano Hiroshi | Zendy; Akasaki Isamu | Zendy

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Defects in highly Mg‐doped AlN

Author(s) -

aka Kentaro,

Asai Toshiaki,

Nagamatsu Kentaro,

Iwaya Motoaki,

Kamiyama Satoshi,

Amano Hiroshi,

Akasaki Isamu

Publication year - 2010

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200983504

Subject(s) - doping , materials science , layer (electronics) , epitaxy , vapor phase , phase (matter) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , chromatography , thermodynamics

Microstructural analysis was conducted to observe Mg‐related defects in highly Mg‐doped AlN on an undoped AlN layer grown by metalorganic vapor phase epitaxy. Pyramidal defects at a density of 10 15 cm −3 were observed in the Mg‐doped AlN layer with a Mg concentration of 2.5 × 10 19 cm −3 . The size and density of the pyramidal defects decreased at a low Mg‐doped AlN layer with a Mg concentration. When the Mg concentration is high, defects of different shapes were formed in the Mg‐doped AlN layer.

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