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Defects in highly Mg‐doped AlN
Author(s) -
aka Kentaro,
Asai Toshiaki,
Nagamatsu Kentaro,
Iwaya Motoaki,
Kamiyama Satoshi,
Amano Hiroshi,
Akasaki Isamu
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983504
Subject(s) - doping , materials science , layer (electronics) , epitaxy , vapor phase , phase (matter) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , chromatography , thermodynamics
Microstructural analysis was conducted to observe Mg‐related defects in highly Mg‐doped AlN on an undoped AlN layer grown by metalorganic vapor phase epitaxy. Pyramidal defects at a density of 10 15 cm −3 were observed in the Mg‐doped AlN layer with a Mg concentration of 2.5 × 10 19 cm −3 . The size and density of the pyramidal defects decreased at a low Mg‐doped AlN layer with a Mg concentration. When the Mg concentration is high, defects of different shapes were formed in the Mg‐doped AlN layer.