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Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structures
Author(s) -
Kirste Lutz,
Lim Taek,
Aidam Rolf,
Müller Stefan,
Waltereit Patrick,
Ambacher Oliver
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983501
Subject(s) - materials science , optoelectronics , high electron mobility transistor , chemical vapor deposition , molecular beam epitaxy , metalorganic vapour phase epitaxy , layer (electronics) , wide bandgap semiconductor , electron mobility , diffraction , epitaxy , transistor , nanotechnology , optics , physics , quantum mechanics , voltage
A high‐resolution X‐ray diffraction and X‐ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple‐interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two‐dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H‐SiC (00.1) template.