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High‐output‐power AlGaN/GaN ultraviolet‐light‐emitting diodes by activation of Mg‐doped p‐type AlGaN in oxygen ambient
Author(s) -
Nagata Kengo,
Ichikawa Tomoki,
Takeda Kenichiro,
Nagamatsu Kentaro,
Iwaya Motoaki,
Kamiyama Satoshi,
Amano Hiroshi,
Akasaki Isamu
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983448
Subject(s) - annealing (glass) , materials science , oxygen , analytical chemistry (journal) , nitrogen , doping , ultraviolet , dissociation (chemistry) , hydrogen , diode , optoelectronics , chemistry , metallurgy , organic chemistry , chromatography
We demonstrated activation annealing of Mg‐doped p‐type Al 0.17 Ga 0.83 N in different gases. The hole concentration of Al 0.17 Ga 0.83 N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 10 16 cm −3 at room temperature was achieved by annealing in oxygen flow at 900 °C. Secondary ion mass spectroscopy shows that hydrogen dissociation from Mg‐doped Al 0.17 Ga 0.83 N is found to be enhanced by annealing in a flow of oxygen, compared with annealing in a flow of nitrogen. We confirmed the effect of activation annealing in oxygen flow on the performance of UV light‐emitting diode (LED). At a DC current of 100 mA, the output power of the LED annealed in oxygen flow at 900 °C is four times higher than that of the LED annealed in nitrogen flow at 800 °C.