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MBE growth of cubic AlN on 3C‐SiC substrate
Author(s) -
Schupp Thorsten,
Rossbach Georg,
Schley Pascal,
Goldhahn Rüdiger,
Röppischer Marcus,
Esser Norbert,
Cobet Christoph,
Lischka Klaus,
As Donat Josef
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983437
Subject(s) - reflection high energy electron diffraction , molecular beam epitaxy , electron diffraction , materials science , diffraction , substrate (aquarium) , superlattice , crystallography , epitaxy , molecular physics , condensed matter physics , optoelectronics , optics , chemistry , layer (electronics) , nanotechnology , physics , oceanography , geology
Abstract We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C‐SiC (001) substrate. For high‐quality c‐AlN layers reflection high‐electron energy diffraction (RHEED) patterns in all azimuths show RHEED patterns of the cubic lattice, hexagonal reflections are absent. High‐resolution X‐ray diffraction (HRXRD) measurements confirm the cubic structure of the c‐AlN layers with a lattice parameter of 4.373 Å. Atomic force microscopy (AFM) scans show an atomically smooth surface with a roughness of 0.2 nm RMS. Ellipsometry studies yield the dielectric function (DF) of c‐AlN from 1 to 10 eV. The direct gap is determined with 5.93 eV at room temperature, while the indirect one is below 5.3 eV (onset of adsorption). The high‐energy part of the DF is dominated by two transitions at 7.20 and 7.95 eV attributed to critical points of the band structure.