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Co‐adsorption processes, kinetics and quantum mechanical modelling of nanofilm semiconductor gas sensors
Author(s) -
VelascoVélez JuanJesús,
Kunze Ulrich,
Haas Thomas,
Doll Theodor
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983322
Subject(s) - adsorption , semiconductor , quantum , kinetics , molecule , materials science , chemical physics , surface (topology) , chemical engineering , nanotechnology , chemistry , optoelectronics , physics , quantum mechanics , organic chemistry , mathematics , engineering , geometry
A quantum mechanical model of co‐adsorption on semiconductor surfaces is developed and successfully adopted towards exposure to several gases. It is related to nanofilms and thus allows the application of electric fields altering the electronic surface properties of adsorption centres (electroadsorptive effect, EAE). The model is matched against experimental data with O 2 , NO 2 and CO measurements under the hypothesis of no direct interaction among the species. However the sequence of adsorption plays an important role where the adsorption of one gas species is opening up other sites that are filled by another sort of impinging molecules. Quantum mechanical modelling of co‐adsorption: (a) NO 2 and CO present at the SnO 2 surface. (b) Simplified model. (c) Probability of adsorption.