Investigation of InN layers grown by molecular beam epitaxy on GaN templates | Zendy

VilaltaClemente A. | Zendy; Mutta G. R. | Zendy; Chauvat M. P. | Zendy; Morales M. | Zendy; Doualan J. L. | Zendy; Ruterana P. | Zendy; Grandal J. | Zendy; SánchezGarcía M. A. | Zendy; Calle F. | Zendy; Valcheva E. | Zendy; Kirilov K. | Zendy

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Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Author(s) -

VilaltaClemente A.,

Mutta G. R.,

Chauvat M. P.,

Morales M.,

Doualan J. L.,

Ruterana P.,

Grandal J.,

SánchezGarcía M. A.,

Calle F.,

Valcheva E.,

Kirilov K.

Publication year - 2010

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200983117

Subject(s) - molecular beam epitaxy , photoluminescence , materials science , raman spectroscopy , diffraction , template , optoelectronics , epitaxy , optics , nanotechnology , layer (electronics) , physics

An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.

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