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Investigation of InN layers grown by molecular beam epitaxy on GaN templates
Author(s) -
VilaltaClemente A.,
Mutta G. R.,
Chauvat M. P.,
Morales M.,
Doualan J. L.,
Ruterana P.,
Grandal J.,
SánchezGarcía M. A.,
Calle F.,
Valcheva E.,
Kirilov K.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983117
Subject(s) - molecular beam epitaxy , photoluminescence , materials science , raman spectroscopy , diffraction , template , optoelectronics , epitaxy , optics , nanotechnology , layer (electronics) , physics
An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.