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Microstructure of N‐face InN grown on Si (111) by plasma‐assisted MBE using a thin GaN–AlN buffer layer
Author(s) -
Dimitrakopulos G. P.,
Kehagias Th.,
Ajagunna A.,
Kioseoglou J.,
Kerasiotis I.,
Nouet G.,
Vajpeyi A. P.,
Komninou Ph.,
Karakostas Th.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983103
Subject(s) - materials science , molecular beam epitaxy , dislocation , transmission electron microscopy , optoelectronics , microstructure , layer (electronics) , epitaxy , buffer (optical fiber) , composite material , nanotechnology , telecommunications , computer science
The structural properties of 2 µm thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions occurred in the first ∼200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.