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Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor
Author(s) -
Ram Sanjay K.,
Kroely Laurent,
Bulkin Pavel,
Cabarrocas Pere Roca i
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982905
Subject(s) - electron cyclotron resonance , materials science , plasma enhanced chemical vapor deposition , silane , silicon , thin film , analytical chemistry (journal) , chemical vapor deposition , substrate (aquarium) , ion , composite material , optoelectronics , chemistry , nanotechnology , oceanography , organic chemistry , chromatography , geology
Microcrystalline silicon films were deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) system using pure silane, under varying substrate bias conditions. Microstructural characterization of the films shows a lower void fraction and a preponderance of nanograins in films deposited at negative bias, while in positive bias a thin incubation layer is seen with a higher void fraction. Plasma emission studies reveal higher electron temperature and more atomic H at positive bias, which lead to early onset of crystallization. The microstructural properties of the films are correlated with the dark and phototransport properties. Our study demonstrates the importance of substrate bias in controlling the ion energy and properties of films deposited in the MDECR reactor.