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Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a‐Si:H)
Author(s) -
Fehr M.,
Schnegg A.,
Teutloff C.,
Bittl R.,
Astakhov O.,
Finger F.,
Rech B.,
Lips K.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982876
Subject(s) - dangling bond , amorphous silicon , electron paramagnetic resonance , homogeneous , materials science , hydrogen , amorphous solid , silicon , envelope (radar) , distribution (mathematics) , resonance (particle physics) , crystallography , atomic physics , molecular physics , condensed matter physics , nuclear magnetic resonance , chemistry , physics , crystalline silicon , optoelectronics , thermodynamics , organic chemistry , computer science , telecommunications , radar , mathematical analysis , mathematics
We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47 (12), 7013–7024 (1993)] we find that the distance between H atoms and dangling‐bond defects can be well below r = 3 Å. Our experimental data suggest that the H distribution is continuous and homogeneous and there is no indication for a short‐range order between H atoms and dangling bonds. This work is a first step toward the investigation of the H distribution around light‐induced defects to test models predicting the immediate proximity of H and defects.
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