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Growth of stable amorphous silicon films by gas‐flow‐controlled RF plasma‐enhanced chemical vapor deposition
Author(s) -
Niikura Chisato,
Matsuda Akihisa
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982844
Subject(s) - plasma enhanced chemical vapor deposition , chemical vapor deposition , materials science , volumetric flow rate , plasma , deposition (geology) , radio frequency , amorphous silicon , silicon , analytical chemistry (journal) , optoelectronics , chemical engineering , nanotechnology , chemistry , crystalline silicon , electrical engineering , environmental chemistry , paleontology , physics , quantum mechanics , sediment , biology , engineering
We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and low pressure conditions. The effectiveness of the gas‐flow control has been confirmed. As a result, a‐Si:H films with a SiH 2 density of 0 at.% were successfully obtained at a relatively high growth rate of 0.27 nm/s by the novel technique, even under RF conditions. Further optimization of electrode configuration and deposition conditions would improve the growth rate of a‐Si:H films with high stability against light soaking.