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Effect of local doping on the electronic properties of epitaxial graphene on SiC
Author(s) -
Červenka Jiří,
van der Ruit Kevin,
Flipse Kees
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982767
Subject(s) - graphene , scanning tunneling microscope , materials science , silicon carbide , doping , scanning tunneling spectroscopy , layer (electronics) , condensed matter physics , nanotechnology , graphene nanoribbons , epitaxy , silicon , scanning electron microscope , optoelectronics , composite material , physics
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon‐rich interface layer whose structure is discussed.Scanning tunneling microscopy images of a first graphene layer on SiC(0001) taken at bias voltage −500 and 500 mV (5 × 5 nm 2 ). Red circles and blue crosses indicate that localized states in the filled and empty electron states belonging to the underlying interface layer are located at different positions.