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Structural order on different length scales in amorphous silicon investigated by Raman spectroscopy
Author(s) -
Muthmann S.,
Köhler F.,
Carius R.,
Gordijn A.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982749
Subject(s) - raman spectroscopy , materials science , chemical vapor deposition , silicon , silane , amorphous solid , amorphous silicon , phonon , analytical chemistry (journal) , microcrystalline , plasma enhanced chemical vapor deposition , substrate (aquarium) , spectroscopy , optics , crystalline silicon , condensed matter physics , crystallography , chemistry , optoelectronics , physics , composite material , oceanography , chromatography , quantum mechanics , geology
Parameters for the structural short (SRO) and medium range order (MRO) of hydrogenated amorphous silicon (a‐Si:H) films on the edge of the microcrystalline silicon (µc‐Si:H) phase transition were studied with Raman spectroscopy. The observed samples were deposited using radio frequency plasma enhanced chemical vapor deposition. The studied films were grown with various constant and non‐constant silane concentrations (SCs). A substrate dependent correlation of SC to the intensity ratio ( I MRO ) of the transversal acoustical (TA) and the transversal optical (TO) phonon bands was found. A strong correlation between width and position of the (TO) phonon band was observed. These two easily accessible parameters show an increase of SRO when I MRO decreases.