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Investigation of crystalline orientation factor in microcrystalline silicon thin film deposition
Author(s) -
Saito Kimihiko,
Kondo Michio
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982742
Subject(s) - plasma enhanced chemical vapor deposition , silane , materials science , crystallinity , chemical vapor deposition , deposition (geology) , microcrystalline silicon , silicon , triode , thin film , knoop hardness test , substrate (aquarium) , crystalline silicon , optoelectronics , composite material , nanotechnology , amorphous silicon , microstructure , indentation hardness , electrical engineering , capacitor , voltage , oceanography , engineering , biology , paleontology , sediment , geology
Crystalline orientation factors in microcrystalline silicon (µc‐Si) deposition are investigated by the triode‐plasma enhanced chemical vapor deposition (PECVD) method and conventional diode‐PECVD with optical emission spectroscopy (OES). The existence of more important factors for the orientation than the ion and the [H]/[SiH x ] ratio on the growing surface is suggested from the SiH 4 flow rate and the mesh‐electrode gap dependence of the orientation and the crystallinity in triode‐PECVD. Improvement of the crystallinity and the independent orientation of the following film on the seed‐layer offer the deposition radicals to act a key role for the crystalline growth direction. The oligomerized‐silane radical (probably dimeric radical) is proposed as an orientation factor by the relation of SiH* emission intensity on the deposition rate and the orientation.