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In situ measurements of surface (photo)voltage of roll‐to‐roll deposited thin film silicon solar cells
Author(s) -
Van Aken Bas B.,
Bakker Klaas J.,
Heijna Maurits C. R.,
Reid Dennis,
Baikie Iain,
Soppe Wim J.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982741
Subject(s) - kelvin probe force microscope , plasma enhanced chemical vapor deposition , roll to roll processing , materials science , surface photovoltage , silicon , voltage , optoelectronics , thin film , work function , photovoltaic system , plasma , deposition (geology) , electrode , in situ , electrical engineering , layer (electronics) , composite material , nanotechnology , chemistry , engineering , paleontology , physics , quantum mechanics , sediment , spectroscopy , atomic force microscopy , biology , organic chemistry
Abstract The Kelvin probe is a non‐contact, non‐destructive vibrating capacitor device that measures the work function difference between a conducting sample and a vibrating tip. This contribution focuses on inline monitoring of the surface (photo)voltage of deposited silicon layers. We apply a custom‐built in situ Kelvin probe, operated in a roll‐to‐roll PECVD system, located immediately after the plasma zones to enable direct feedback to the controlling system of the plasma deposition. The surface photovoltage of nip thin film Si solar cells increases with increasing V oc . The results imply that inline, contactless measurements of the open‐circuit voltage are possible and that thus monitoring the doped layer quality during roll‐to‐roll production is feasible.