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The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2$ and crystalline volume fraction in microcrystalline silicon growth
Author(s) -
Chantana Jakapan,
Higuchi Takuya,
Nagai Tomoyuki,
Sasaki Shota,
Sobajima Yasushi,
Toyama Toshihiko,
Sada Chitose,
Matsuda Akihisa,
Okamoto Hiroaki
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982733
Subject(s) - crystallinity , microcrystalline , microcrystalline silicon , analytical chemistry (journal) , volume fraction , materials science , silicon , intensity (physics) , volume (thermodynamics) , thin film , growth rate , mineralogy , crystallography , nanotechnology , optics , chemistry , crystalline silicon , physics , optoelectronics , thermodynamics , composite material , mathematics , geometry , organic chemistry , amorphous silicon
Optical‐emission‐intensity ratio of $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )$ during film growth has been used as a simple indicator to predict crystallinity (crystal‐volume fraction: X C ) in the resulting microcrystalline silicon (µc‐Si:H) thin films. The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )$ and X C has been checked under a wide variety of film‐preparation conditions including low‐deposition‐rate (<0.1 nm/s) and high‐deposition‐rate (>5 nm/s) cases. On the basis of theoretical consideration, we have proposed optical‐emission‐intensity ratio of $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2 $ as a new indicator of X C during film growth of µc‐Si:H.