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Real time monitoring of the crystallization process during the plasma annealing of amorphous silicon
Author(s) -
Ohta Naoki,
Imamura Takashi,
Shimizu Hirokazu,
Kobayashi Tomohiro,
Shirai Hajime
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982720
Subject(s) - crystallization , materials science , annealing (glass) , amorphous silicon , silicon , polycrystalline silicon , amorphous solid , plasma , analytical chemistry (journal) , quartz , millisecond , ellipsometry , crystalline silicon , chemical engineering , thin film , crystallography , composite material , optoelectronics , nanotechnology , chemistry , physics , layer (electronics) , quantum mechanics , chromatography , astronomy , engineering , thin film transistor
The transient surface temperature and optical transmissivity profiles during the plasma annealing of amorphous silicon (a‐Si) on quartz substrate was studied using a radio‐frequency (rf) thermal plasma torch (TPT). The film crystallization promoted through solid‐phase crystallization (SPC) at surface temperature of 750 °C, followed by a lateral crystalline grain growth at above 900 °C within millisecond time domain. The spectroscopic ellipsometry study revealed that the film crystallization by a TPT annealing promoted from near the bottom surface due to the sufficient thermal storage in the bulk rather than the top surface. The average crystalline grain size extended to 200–300 nm by adjusting the stage velocity and substrate distance.