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MOVPE growth and characterization of indium nitride on C‐, A‐, M‐, and R‐plane sapphire
Author(s) -
Moret Matthieu,
Ruffenach Sandra,
Briot Olivier,
Gil Bernard
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982641
Subject(s) - sapphire , materials science , indium nitride , photoluminescence , indium , metalorganic vapour phase epitaxy , substrate (aquarium) , nitride , diffraction , optoelectronics , surface roughness , characterization (materials science) , crystallography , epitaxy , optics , nanotechnology , laser , composite material , chemistry , layer (electronics) , oceanography , physics , geology
We have investigated the heteroepitaxial growth of indium nitride on sapphire substrates having different orientations. Growths were performed on C‐, A‐, M‐, and R‐plane‐oriented sapphire in order to analyze the substrate orientation effect on the structural, optical, and electronic properties of InN. The orientation relationship between InN and sapphire was deduced by θ /2 θ High‐resolution X‐ray diffraction (HRXRD) measurements. These experiments show the ability to grow InN along nonpolar (11 2 0) orientation and the semipolar (11 2 2) orientation, depending of the orientations of the sapphire substrate. The crystalline quality was assessed by XRD symmetric and asymmetric rocking curve measurements. We observed no drastic disparity between our samples, all exhibiting a reasonable crystalline quality. Atomic force microscopy imaging on these layers revealed different surface morphologies with a roughness varying between 30 and 60 nm. Electrical properties of the InN samples were investigated by room temperature Hall effect measurements and a line shape fitting of the photoluminescence was performed in order to get optically the values of the residual carrier density in the nitride layers.