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Phosphorus incorporation and activity in (100)‐oriented homoepitaxial diamond layers
Author(s) -
Frangieh G.,
Pinault M.A.,
Barjon J.,
Tillocher T.,
Jomard F.,
Chevallier J.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200982223
Subject(s) - cathodoluminescence , diamond , chemical vapor deposition , phosphorus , analytical chemistry (journal) , secondary ion mass spectrometry , chemistry , deposition (geology) , materials science , inorganic chemistry , chemical engineering , mass spectrometry , nanotechnology , environmental chemistry , optoelectronics , luminescence , geology , organic chemistry , chromatography , paleontology , sediment , engineering
Abstract In this work, we present a study about the homoepitaxial growth of phosphorus‐doped diamond on (100) substrates. The growth was performed by microwave plasma assisted chemical vapor deposition (MPCVD) adding an organic precursor for phosphorus (tertiarybutylphosphine: TBP) in the gaseous phase. We show that phosphorus is incorporated in (100) chemical vapor deposition (CVD) diamond as proved by secondary ion mass spectrometry (SIMS). The recombination of excitons bound to phosphorus donors is observed by cathodoluminescence (CL) spectroscopy. The influence of the growth parameters on the phosphorus donor activity is investigated. We show that the [C*]/[H 2 ] ratio is a key parameter for controlling the P‐donor activity when diamond is grown on (100) surfaces.