Premium
Significant enhancement of critical current density in MgB 2 with HgO doping under high pressure
Author(s) -
Cui Yajing,
Chen Yongliang,
Yang Ye,
Hong Shiming,
Cheng Cuihua,
Zhao Yong
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925621
Subject(s) - materials science , impurity , doping , alloy , grain boundary , flux pinning , scanning electron microscope , condensed matter physics , crystallite , analytical chemistry (journal) , grain size , critical current , metallurgy , microstructure , superconductivity , composite material , chemistry , physics , optoelectronics , organic chemistry , chromatography
A series of HgO‐doped MgB 2 samples have been prepared under high pressure. Even 27 and 43 wt% impurities have been observed in the Mg 1.05− x (HgO) x B 2 samples with x = 0.05 and 0.075, the critical current density, J c , have been significantly improved under both low and high magnetic fields. XRD and scanning electron microscope (SEM) analyses revealed that HgO reacted with Mg to form MgHg alloy. The formation of MgHg alloy contributed not only to the refinement of MgB 2 grain size and improvement of grain connection, but also to homogeneous distribution of a large amount of impurities in the MgB 2 matrix. As a consequence, grain‐boundary pinning was strengthened and new point pinning was generated. Effective improvement of flux pinning together with the very high impurity tolerance in HgO‐doped MgB 2 samples might provide another potential route to prepare high‐performance MgB 2 bulks and wires on an industrial scale.