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HRTEM observation of defect structures of β‐Ga 2 O 3 nanowires
Author(s) -
Yang Qing,
Yasuda Takahiro,
Brown Paul D.,
Tanaka Miyoko,
Tatsuoka Hirokazu
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925613
Subject(s) - nanowire , high resolution transmission electron microscopy , materials science , transmission electron microscopy , vapor–liquid–solid method , gallium , crystallography , anisotropy , impurity , perpendicular , nanotechnology , condensed matter physics , geometry , chemistry , optics , metallurgy , physics , mathematics , organic chemistry
The defect structures of β‐Ga 2 O 3 nanowires were characterized using transmission electron microscopy (TEM). Branched and jagged β‐Ga 2 O 3 nanowires were obtained by the heat treatment of gallium metal with Cu 5 Si powders. The growth direction of the branched nanowire is perpendicular to the (001) planes, the (001) planes of the branch nanowire, and the (110) planes of the primary nanowire face each other at the grain boundary. The jagged nanowire has a growth direction combining the [001] and $[\bar {1}01]$ directions. Cu atoms were highly concentrated at the β‐Ga 2 O 3 nanowires, and the effect of impurity on the growth of β‐Ga 2 O 3 nanowires was demonstrated. The dynamic evolution of β‐Ga 2 O 3 nanowires with reference to specific morphological features was discussed in terms of the anisotropic crystalline structures of the β‐Ga 2 O 3 crystals. It is found that the structural and morphological properties of β‐Ga 2 O 3 nanowires were greatly influenced by the growth conditions, and the specific crystalline defects affected the final morphological feature of the nanowires.