Annealing temperature‐dependent piezoelectric properties of Bi 3.15 Nd 0.85 Ti 3 O 12  ferroelectric thin films | Zendy

Chen Y. Q. | Zendy; Zheng X. J. | Zendy; He L. | Zendy; Feng X. | Zendy

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Annealing temperature‐dependent piezoelectric properties of Bi 3.15 Nd 0.85 Ti 3 O 12 ferroelectric thin films

Author(s) -

Chen Y. Q.,

Zheng X. J.,

He L.,

Feng X.

Publication year - 2010

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200925490

Subject(s) - piezoelectricity , materials science , annealing (glass) , ferroelectricity , dielectric , piezoelectric coefficient , thin film , permittivity , microstructure , polarization (electrochemistry) , relative permittivity , analytical chemistry (journal) , composite material , nuclear magnetic resonance , mineralogy , optoelectronics , nanotechnology , chemistry , chromatography , physics

Annealing temperature‐dependent (ATD) microstructure, ferroelectric, dielectric, and piezoelectric properties of Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films by metal‐organic decomposition method were investigated in detail. The relative permittivity ε r (702) at 1 kHz, the spontaneous polarization 2 P s (72 µC/cm 2 ), and the effective piezoelectric coefficient d 33 (62 pm/V) under the amplitudes of the bipolar driving field 320 and 280 kV/cm are the best for BNT thin film annealed at 700 °C. The 2 P s and ε r moderated by annealing temperature are responsible for ATD piezoelectric properties according to phenomenologic equation. The results show BNT is a promising candidate for piezoelectric thin film devices.

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