Structural, optical, and electrical properties of n‐ZnO/p‐GaAs heterojunction | Zendy

Tekmen Süleyman | Zendy; Gür Emre | Zendy; Asıl Hatice | Zendy; Çınar Kübra | Zendy; Coşkun Cevdet | Zendy; Tüzemen Sebahattin | Zendy

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Structural, optical, and electrical properties of n‐ZnO/p‐GaAs heterojunction

Author(s) -

Tekmen Süleyman,

Gür Emre,

Asıl Hatice,

Çınar Kübra,

Coşkun Cevdet,

Tüzemen Sebahattin

Publication year - 2010

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200925488

Subject(s) - heterojunction , photoluminescence , materials science , rectification , substrate (aquarium) , optoelectronics , thin film , diode , diffraction , ultraviolet , voltage , optics , nanotechnology , electrical engineering , oceanography , physics , geology , engineering

n‐ZnO film grown by electrodeposition (ECD) on p‐GaAs substrate was characterized by structural, optical, and electrical techniques. X‐ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong c ‐axis (0002) preferential orientation. Photoluminescence (PL) measurements showed that the grown film has a strong and narrow ultraviolet (UV) emission indicating high‐quality ZnO thin film. Current–voltage ( I – V ) measurement of n‐ZnO/p‐GaAs heterojunction shows diode‐like rectifying characteristics with an almost five‐order rectification factor and a turn‐on voltage of 2 V.

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