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Structural, optical, and electrical properties of n‐ZnO/p‐GaAs heterojunction
Author(s) -
Tekmen Süleyman,
Gür Emre,
Asıl Hatice,
Çınar Kübra,
Coşkun Cevdet,
Tüzemen Sebahattin
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925488
Subject(s) - heterojunction , photoluminescence , materials science , rectification , substrate (aquarium) , optoelectronics , thin film , diode , diffraction , ultraviolet , voltage , optics , nanotechnology , electrical engineering , oceanography , physics , geology , engineering
n‐ZnO film grown by electrodeposition (ECD) on p‐GaAs substrate was characterized by structural, optical, and electrical techniques. X‐ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong c ‐axis (0002) preferential orientation. Photoluminescence (PL) measurements showed that the grown film has a strong and narrow ultraviolet (UV) emission indicating high‐quality ZnO thin film. Current–voltage ( I – V ) measurement of n‐ZnO/p‐GaAs heterojunction shows diode‐like rectifying characteristics with an almost five‐order rectification factor and a turn‐on voltage of 2 V.