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Soft X‐ray emission spectroscopy of low‐dimensional SiO 2 /Si interfaces after Si + ion implantation and ion beam mixing
Author(s) -
Zatsepin D. A.,
Kaschieva S.,
Zier M.,
Schmidt B.,
Fitting H.J.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925469
Subject(s) - materials science , ion beam mixing , ion , silicon , spectroscopy , ion implantation , ion beam , analytical chemistry (journal) , heterojunction , oxide , stoichiometry , ion beam deposition , chemistry , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , metallurgy
An X‐ray Si L 2,3 ‐emission spectroscopy study of a SiO 2 /n‐Si heterostructure containing a thin oxide layer of d = 20 nm thickness implanted by Si + ions with an energy 12 keV is reported. The maximum concentration of implanted Si + ions is located close to the SiO 2 –Si interface at a depth of 18 nm leading to an ion‐beam mixed SiO 2 /Si interface layer in this region, consisting of a non‐stoichiometric SiO x matrix. The possible mechanisms of these processes are discussed by atomic collision cascades (knocking‐off and knocking‐on processes) during ion implantation, associated by partial phase separation into silicon precipitates and SiO 2 .