Soft X‐ray emission spectroscopy of low‐dimensional SiO 2 /Si interfaces after Si +  ion implantation and ion beam mixing | Zendy

Zatsepin D. A. | Zendy; Kaschieva S. | Zendy; Zier M. | Zendy; Schmidt B. | Zendy; Fitting H.J. | Zendy

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Soft X‐ray emission spectroscopy of low‐dimensional SiO 2 /Si interfaces after Si + ion implantation and ion beam mixing

Author(s) -

Zatsepin D. A.,

Kaschieva S.,

Zier M.,

Schmidt B.,

Fitting H.J.

Publication year - 2010

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200925469

Subject(s) - materials science , ion beam mixing , ion , silicon , spectroscopy , ion implantation , ion beam , analytical chemistry (journal) , heterojunction , oxide , stoichiometry , ion beam deposition , chemistry , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , metallurgy

An X‐ray Si L 2,3 ‐emission spectroscopy study of a SiO 2 /n‐Si heterostructure containing a thin oxide layer of d = 20 nm thickness implanted by Si + ions with an energy 12 keV is reported. The maximum concentration of implanted Si + ions is located close to the SiO 2 –Si interface at a depth of 18 nm leading to an ion‐beam mixed SiO 2 /Si interface layer in this region, consisting of a non‐stoichiometric SiO x matrix. The possible mechanisms of these processes are discussed by atomic collision cascades (knocking‐off and knocking‐on processes) during ion implantation, associated by partial phase separation into silicon precipitates and SiO 2 .

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