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Memristive devices based on solution‐processed ZnO nanocrystals
Author(s) -
Wang Jianpu,
Sun Baoquan,
Gao Feng,
Greenham Neil C.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925467
Subject(s) - nanocrystal , materials science , hysteresis , nanotechnology , memristor , conductance , electronic circuit , optoelectronics , current (fluid) , voltage , electrode , electrical resistance and conductance , electronic engineering , electrical engineering , chemistry , condensed matter physics , composite material , physics , engineering
We present a memristive device fabricated using low‐cost solution‐processed colloidal ZnO nanocrystals. Taking advantage of the large surface area of ZnO nanocrystals, we find that an oxygen depletion region can be naturally formed by chemical interaction between an Al electrode and the ZnO nanocrystals. Strong electrical hysteresis, history‐dependent conductance, and sweep‐rate‐dependent current–voltage ( J – V ) curves are observed in our devices. The resistance can be modified between ∼1 and ∼10 4 Ω cm 2 , which is promising for application in non‐volatile memory devices and in low‐cost organic circuits, where typical feature sizes are about 10–100 µm and the circuit current is low.