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Growth of pattern‐free InN micropyramids by metalorganic chemical vapor deposition
Author(s) -
Jamil Muhammad,
Xu Tianming,
Zaidi Tahir,
Melton Andrew,
Jampana Balakrishnam,
Tan CheeLoon,
Ooi Boon S.,
Ferguson Ian T.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925462
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , full width at half maximum , photoluminescence , materials science , sapphire , epitaxy , pyramid (geometry) , optoelectronics , layer (electronics) , crystal (programming language) , crystallography , chemistry , nanotechnology , optics , laser , physics , computer science , programming language
We report on the growth of unidirectional InN micropyramids by using a simple pattern‐free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.16° for the InN (0002) ω rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.