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Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study
Author(s) -
Garino Yiuri,
Teraji Tokuyuki,
Koizumi Satoshi,
Koide Yasuo,
Ito Toshimichi
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925448
Subject(s) - schottky diode , diamond , trapping , transient (computer programming) , current (fluid) , materials science , diode , optoelectronics , reverse bias , voltage , condensed matter physics , physics , electrical engineering , thermodynamics , engineering , composite material , ecology , computer science , biology , operating system
Abstract We investigated the performance of the reverse characteristics of diamond Schottky diodes at high voltage. We observed that when the diode was in reverse bias voltage conditions, the negative current decayed with a stretched exponential behaviour, which can be ascribed to charging effects. During the discharging phase, where no bias was applied, we observed a positive current that shows again a decaying behaviour, but with a power law trend. These behaviours can be rationalized in terms of trapping/detrapping processes occurring at shallow level traps.