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Simultaneous stress and defect luminescence study on silicon
Author(s) -
Gundel Paul,
Schubert Martin C.,
Warta Wilhelm
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925368
Subject(s) - materials science , silicon , wafer , stress (linguistics) , luminescence , photoluminescence , optoelectronics , raman spectroscopy , spectroscopy , limiting , internal stress , optics , composite material , physics , mechanical engineering , linguistics , philosophy , quantum mechanics , engineering
Internal stress is strongly correlated with the mechanical stability of silicon wafers and with the distribution of defects and thus the minority carrier lifetime, which is often the limiting parameter for multicrystalline (mc) silicon solar cells. Therefore, internal stress is a highly relevant parameter for mc silicon. In this paper, a qualitative internal stress measurement technique by photoluminescence spectroscopy for mc silicon is presented. This technique is based on the stress‐induced‐bandgap energy shift. Stress measurements are compared to defect luminescence images, which are gathered in the same measurement. The method is evaluated by stress measurements with micro‐Raman spectroscopy.