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Thermal behavior analysis of GaN based epi‐material on different substrates by means of a physical–thermal model
Author(s) -
Tang Xiao,
Rousseau Michel,
Defrance Nicolas,
Hoel Virginie,
Soltani Ali,
Langer Robert,
De Jaeger JeanClaude
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925321
Subject(s) - materials science , gallium nitride , thermal resistance , substrate (aquarium) , thermal , thermal conductivity , dissipation , interfacial thermal resistance , diamond , optoelectronics , composite material , thermodynamics , layer (electronics) , oceanography , physics , geology
For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self‐heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical–thermal model has been developed to analyze the physical and thermal phenomena observed in experiment. In this paper, the thermal performances of AlGaN/GaN epitaxies grown on different substrates are determined. It is found that compared with Si substrate, composite substrates: SopSiC (mono‐Si/poly‐SiC) and SiCopSiC (mono‐SiC/poly‐SiC) substrates (V. Hoel et al., Electron. Lett. 44 , 238 (2008) 1 and T.J. Anderson et al., J. Vac. Sci. Technol. B 24 , 2302 (2006) 2) present better thermal resistances especially at high dissipated power densities with an improvement of 18% for SopSiC substrate and 25% for SiCopSiC substrate at 12 W/mm. Furthermore, polycrystalline diamond is the most promising substrate with a thermal resistance of 5.4 W/m·K at 12 W/mm. The simulation results, such as lattice temperature and thermal resistance, are in good agreement with our measurements.