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Electrical transport properties of amorphous CN x /p‐Si heterostructures
Author(s) -
Wang X. C.,
Chen X. M.,
Yang B. H.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925319
Subject(s) - heterojunction , amorphous solid , electrical resistivity and conductivity , materials science , sputtering , atmospheric temperature range , cluster (spacecraft) , analytical chemistry (journal) , condensed matter physics , physics , optoelectronics , thin film , nanotechnology , chemistry , crystallography , thermodynamics , quantum mechanics , chromatography , computer science , programming language
The electrical transport properties of amorphous CN x /p‐Si heterostructures fabricated using reactive facing‐target sputtering were investigated systematically. The obvious rectifying effect is observed in the I – V curves for the heterostructures fabricated at the nitrogen partial pressure ( $P_{{\rm N}_2 }$ ) of 20%, and the resistance of the heterostructures in both the forward and reverse voltage ranges increases with the decrease of the current and temperature. At low‐voltage range, the resistance satisfies the relation of ${\rm log}\,R \propto {\rm log}\,I$ , and the slope of the ${\rm log}\,R \propto {\rm log}\,I$ plots increases with the decrease of temperature. The electrical transport characteristic of the heterostructures can be affected by the changes of the number and cluster size of sp 2 C and the ratio of N–C(sp 2 )/N–C(sp 3 ) by adjusting $P_{{\rm N}_2 }$ significantly, and the good rectifying effect of the heterostructures fabricated at a certain condition makes them useful in the field of electronic devices.