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Performance of InSnZrO as transparent conductive oxides
Author(s) -
Zhang B.,
Yu B.,
Jin J.,
Ge B.,
Yin R.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925278
Subject(s) - thin film , materials science , indium tin oxide , band gap , substrate (aquarium) , transmittance , transparent conducting film , sputter deposition , transmission electron microscopy , surface roughness , sputtering , grain size , electrical resistivity and conductivity , optoelectronics , composite material , nanotechnology , oceanography , engineering , geology , electrical engineering
InSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium‐tin‐oxide (ITO) target and a zirconium target. X‐ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical–electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10 −3 to 2.20 × 10 −3 Ω cm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein–Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.