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Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states
Author(s) -
Mickevičius J.,
Kuokštis E.,
Liuolia V.,
Tamulaitis G.,
Shur M. S.,
Yang J.,
Gaska R.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925227
Subject(s) - photoluminescence , quantum confined stark effect , electric field , stark effect , quantum well , chemical vapor deposition , materials science , condensed matter physics , quantum , radiative transfer , optoelectronics , wide bandgap semiconductor , field (mathematics) , physics , quantum mechanics , laser , mathematics , pure mathematics
We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration‐enhanced metal‐organic chemical vapor deposition technique (MEMOCVD®). Screening of the built‐in electric field by photogenerated carriers reduced quantum‐confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN‐based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.