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Extreme temperature 6H‐SiC JFET integrated circuit technology
Author(s) -
Neudeck Philip G.,
Garverick Steven L.,
Spry David J.,
Chen LiangYu,
Beheim Glenn M.,
Krasowski Michael J.,
Mehregany Mehran
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925188
Subject(s) - jfet , electronic circuit , amplifier , digital electronics , electrical engineering , integrated circuit , transistor , materials science , electronics , optoelectronics , engineering physics , field effect transistor , engineering , cmos , voltage
Extreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh‐environment applications well above the 300 °C effective limit of silicon‐on‐insulator IC technology. This paper reviews progress by the NASA Glenn Research Center and Case Western Reserve University (CWRU) in the development of extreme temperature (up to 500 °C) integrated circuit technology based on epitaxial 6H‐SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs fabricated and packaged by NASA have now demonstrated thousands of hours of continuous 500 °C operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Design, modeling, and characterization of transistors and circuits at temperatures from 24 °C to 500 °C are also described. CWRU designs for improved extreme temperature SiC JFET differential amplifier circuits are demonstrated. Areas for further technology maturation, needed prior to beneficial system insertion, are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)