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Electrodeposition of Bi 2 Te 3 films and micro‐pillar arrays on p‐Si(100) wafers
Author(s) -
Liu DaWei,
Xu Ying,
Li JingFeng
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925149
Subject(s) - wafer , materials science , etching (microfabrication) , pillar , reactive ion etching , layer (electronics) , template , electrode , nanotechnology , ion milling machine , optoelectronics , analytical chemistry (journal) , chemistry , chromatography , structural engineering , engineering
Bi 2 Te 3 films and micro‐pillar arrays were electrodeposited, respectively, onto p‐Si(100) wafers and into micro‐templates that were etched on the same wafers with reactive ion etching (RIE). With the potentials of −100 to −300 mV ( vs . saturated calomel electrode), Bi 2 Te 3 films can be obtained from Bi 3+ and HTeO 2 +solution, which showed a (001) preferential orientation. Micro‐templates with vertical holes of 15–18 µm in diameter and 40 µm in depth were etched on p‐Si(100) wafers, and then were set as cathodes. During electrodeposition, the SiO 2 layer on the wafer surface served as an insulating layer, and Bi 2 Te 3 only crystallized on the inner wall of etched holes. With the potentials of −300 to −700 mV, Bi 2 Te 3 pillar arrays can be fabricated by filling electrodeposition, and the filling ratios and qualities were sensitive to the potentials. After removing the templates with RIE, the Bi 2 Te 3 pillars can stand on the wafer surfaces.