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Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
Author(s) -
Chow T. Paul,
Naik H.,
Li Z.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925125
Subject(s) - materials science , subthreshold conduction , optoelectronics , capacitor , threshold voltage , electron mobility , mosfet , subthreshold slope , trapping , voltage , electrical engineering , transistor , engineering , ecology , biology
We have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐effect mobility for 4H‐SiC MOSFETs, we have recently reported more superior MOS parameters for 2H‐GaN MOSFETs. In addition, we have performed MOS‐gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in 2H‐GaN MOSFETs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)