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Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
Author(s) -
Zhang Qingchun Jon,
Agarwal Anant K.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925103
Subject(s) - bipolar junction transistor , thyristor , materials science , schottky diode , power semiconductor device , insulated gate bipolar transistor , electrical engineering , optoelectronics , transistor , diode , current injection technique , engineering physics , voltage , engineering
There has been a rapid improvement in SiC materials and power devices during the last few years. SiC unipolar devices such as Schottky diodes, JFETs and MOSFETs have been developed extensively and advantages of insertion of such devices in power electronic systems have been demonstrated [1, 2]. However, unipolar devices for high voltage systems suffer from high drift layer resistance that gives rise to high power dissipation in the on‐state. For such applications, bipolar devices are preferred due to their low on‐resistance. In this article, the physics and technology of SiC bipolar devices, namely Bipolar Junction Transistors (BJTs), Insulated Gate Bipolar Transistors (IGBTs), and Gate Turn Off Thyristors (GTOs), are discussed. A detailed review of the current status and future trends in these devices is given with an emphasis on the device design and characterization. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)