Effect of deposition temperature on the microstructure and dielectric properties of Ba 0.6 Sr 0.4 TiO 3  thin film deposited by radio‐frequency magnetron sputtering | Zendy

Feng Zuyong | Zendy; Chen Wei | Zendy; Tan Ooi Kiang | Zendy

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Effect of deposition temperature on the microstructure and dielectric properties of Ba 0.6 Sr 0.4 TiO 3 thin film deposited by radio‐frequency magnetron sputtering

Author(s) -

Feng Zuyong,

Chen Wei,

Tan Ooi Kiang

Publication year - 2009

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200925045

Subject(s) - materials science , crystallinity , dielectric , sputter deposition , thin film , annealing (glass) , microstructure , cavity magnetron , substrate (aquarium) , radio frequency , analytical chemistry (journal) , sputtering , optoelectronics , mineralogy , composite material , electrical engineering , nanotechnology , chemistry , oceanography , engineering , chromatography , geology

Ba 0.6 Sr 0.4 TiO 3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO 2 /Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well‐crystallized BST film was deposited. The dielectric constant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crystallinity of the BST films deposited by RF magnetron sputtering, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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