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Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes
Author(s) -
Park SeoungHwan,
Ahn Doyeol,
Koo BunHei,
Kim JongWook
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925020
Subject(s) - quantum well , optoelectronics , light emitting diode , wavelength , materials science , diode , layer (electronics) , spontaneous emission , optics , physics , laser , nanotechnology
Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure requires a slightly larger In composition than the conventional QW structure to obtain a given wavelength. The spontaneous emission is found to be improved with the inclusion of the staggered layer for QW structures with a relatively thick well width and the longer wavelength ( λ = 530 nm). On the other hand, in the case of QW structures with a relatively thin well width ( L w = 2 nm), the spontaneous emission peak is almost unaffected by a staggered layer.