Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes

Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure requires a slightly larger In composition than the conventional QW structure to obtain a given wavelength. The spontaneous emission is found to be improved with the inclusion of the staggered layer for QW structures with a relatively thick well width and the longer wavelength ( λ  = 530 nm). On the other hand, in the case of QW structures with a relatively thin well width ( L w  = 2 nm), the spontaneous emission peak is almost unaffected by a staggered layer.