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Integration of GaAs/In 0.1 Ga 0.9 As/AlAs resonance tunneling heterostructures into micro‐electro‐mechanical systems for sensor applications
Author(s) -
Xue Chenyang,
Hu Jie,
Zhang Wendong,
Zhang Binzhen,
Xiong Jijun,
Chen Yong
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925015
Subject(s) - heterojunction , piezoresistive effect , quantum tunnelling , optoelectronics , materials science , resonance (particle physics) , silicon , quantum well , physics , optics , atomic physics , laser
Double‐barrier quantum‐well resonant tunneling heterostructures of GaAs/In 0.1 Ga 0.9 As/AlAs have been used as pressure‐sensing elements of designed micro‐electro‐mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 × 10 −9 Pa −1 , which is about seven times larger than that of piezoresistive silicon devices. At the same time, the devices also provided an improved dynamic response (119.6 µV · g −1 V −1 ) and signal‐to‐noise ratio (57 dB) in the NDR region.