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Influence of substrate temperature on structural, electrical and optical properties of flash evaporated CuIn 0.60 Al 0.40 Se 2 thin films
Author(s) -
Chandra G. Hema,
Udayakumar C.,
Rajagopalan S.,
Balamurugan A. K.,
Uthanna S.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200925010
Subject(s) - materials science , electrical resistivity and conductivity , thin film , analytical chemistry (journal) , substrate (aquarium) , band gap , flash evaporation , atmospheric temperature range , phase (matter) , impurity , evaporation , chemistry , nanotechnology , optoelectronics , oceanography , physics , engineering , organic chemistry , chromatography , geology , meteorology , electrical engineering , thermodynamics
CuIn 0.60 Al 0.40 Se 2 thin films were grown by the flash evaporation method onto glass substrates held at temperatures in the range 303–623 K. The influence of substrate temperature on growth of the films was studied. The growth of the highly (111) oriented CuIn 0.60 Al 0.40 Se 2 thin films was observed at T S = 598 K exhibiting sphalerite structure. The surface morphology of CuIn 0.60 Al 0.40 Se 2 films deposited at T S = 623 K indicates segregation of Cu 2– x Se binary phase. The electrical resistivity was around 66 Ω cm (300 nm) with p‐type conductivity for the films deposited at 598 K. The temperature dependence of the electrical conductivity suggested that above 493 K the conduction mechanism was intrinsic, whereas extrinsic/impurity conduction dominated in the range 303–473 K. The single phase CuIn 0.60 Al 0.40 Se 2 films showed an optical bandgap of 1.37 eV. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)