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Cover Picture: phys. stat. sol. (a) 205/7
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200890007
Subject(s) - electroluminescence , light emitting diode , wafer , materials science , chemical vapor deposition , optoelectronics , epitaxy , planar , diode , quantum efficiency , dislocation , optics , nanotechnology , composite material , physics , layer (electronics) , computer science , computer graphics (images)
The cover picture illustrates electroluminescence results for nonpolar a ‐plane 360 nm UV LEDs grown over high quality SLEO templates reported by Bilge Imer et al. (p. 1705): To overcome the obstacle of high defect densities in these devices, nonpolar a ‐plane GaN films were grown by sidewall lateral epitaxial overgrowth (SLEO) technique with a threading dislocation density of ∼10 6 –10 7 cm –2 . The device structure is depicted at the upper right. For comparison, 360 nm GaN/AlGaN multiple quantum well ultraviolet light emitting diodes were grown over planar a ‐plane films and reduced defect density SLEO films with metalorganic chemical vapor deposition and processed together. The photographs illustrate the emission of SLEO a ‐plane on wafer LEDs under the microscope. Compared with the defected planar films, the high quality SLEO material yielded ∼100–300 times higher external quantum efficiency and ∼2.5–3 times lower series resistance with an electroluminescence peak at 360 nm (lower left). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)