Cover Picture: phys. stat. sol. (a) 205/3

The lower part of the cover picture illustrates the bottom‐contact design of an organic field effect transistor (OFET), thus showing the currently favoured approach for building such devices with an organic semiconductor as the active layer. Whereas the manufacturing of the three electrodes (source S, gate G, and drain D) on an insulating substrate is rather straightforward, the controlled deposition of the organic material, either small, oligomeric molecules or polymers, represents a major challenge. The precise orientation of the molecules on the gate insulator and even more importantly at the source and drain electrodes strongly influences the device characteristics (upper left). They are often affected by molecular reorientation phenomena and contaminations, as is emphasized in the enlarged view on the upper right. The interrelation between the deposition conditions, electrode surface modifications, and details of the processing on the one side and the electrical characteristic of an OFET device on the other side is the topic of the present issue. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)