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Photoluminescence and electrical properties of epitaxial Al‐doped ZnO transparent conducting thin films
Author(s) -
Noh Jun Hong,
Cho InSun,
Lee Sangwook,
Cho Chin Moo,
Han Hyun Soo,
An JaeSul,
Kwak Chae Hyun,
Kim Jin Yong,
Jung Hyun Suk,
Lee JungKun,
Hong Kug Sun
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881790
Subject(s) - photoluminescence , materials science , doping , sapphire , optoelectronics , exciton , epitaxy , thin film , annealing (glass) , wide bandgap semiconductor , analytical chemistry (journal) , laser , optics , nanotechnology , chemistry , condensed matter physics , composite material , physics , layer (electronics) , chromatography
Epitaxial ZnO and Al‐doped ZnO (AZO) thin films were grown on (0001)‐sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3 × 10 3 S cm −1 ), as‐grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0 × 10 2 S cm −1 ) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.