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Resistance switching properties of epitaxial Pr 0.7 Ca 0.3 MnO 3 thin films with different electrodes
Author(s) -
Lau H. K.,
Leung C. W.,
Chan Y. K.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881782
Subject(s) - electrode , materials science , thin film , electric field , voltage , optoelectronics , epitaxy , high resistance , metal , analytical chemistry (journal) , electrical engineering , nanotechnology , chemistry , layer (electronics) , metallurgy , agronomy , physics , engineering , quantum mechanics , biology , chromatography
Resistance switching effect caused by external electric field was investigated in Pr 0.7 Ca 0.3 MnO 3 (PCMO) thin films grown on (001)‐oriented LaAlO 3 , by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic current–voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in non‐volatile memory devices.