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A combined X‐ray, ellipsometry and atomic force microscopy study on thin parylene‐C films
Author(s) -
Flesch HeinzGeorg,
Werzer Oliver,
Weis Martin,
Jakabovič Ján,
Kováč Jaroslav,
Haško Daniel,
Jakopič Georg,
Wondergem Harry J.,
Resel Roland
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881616
Subject(s) - x ray reflectivity , materials science , ellipsometry , thin film , surface finish , refractive index , reflectometry , parylene , surface roughness , optics , silicon , layer (electronics) , analytical chemistry (journal) , homogeneity (statistics) , silicon oxide , optoelectronics , composite material , nanotechnology , chemistry , polymer , physics , chromatography , time domain , statistics , mathematics , silicon nitride , computer science , computer vision
Parylene‐C thin films in a thickness range from 7 to 35 nm are deposited on silicon oxide and investigated for their structural and morphological properties by different methods. It is shown that spectroscopic ellipsometry (SE) is a powerful tool to obtain spatially resolved information on the homogeneity of thin films revealing relative changes in layer thickness and in the refractive index. However, the results can be considerably improved in combination with X‐ray reflectivity (XRR) which provides highly accurate results on layer thickness. The layer thickness from XRR is used as a fixed input value for the evaluation of the ellipsometry data which reveals a layer thickness dependence of the refractive index in the thin film regime. The interface roughness is determined from XRR as well as the surface rms roughness which can be compared to the roughness found by atomic force microscopy (AFM) which varies between 0.5 and 2.0 nm. Both results for the roughness show excellent agreement. Additionally a correlation of the roughness and the deposition rate is found.