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High‐resolution three‐dimensional reciprocal space mapping of semiconductor nanostructures
Author(s) -
Mariager Simon O.,
Schlepütz Christian M.,
Aagesen Martin,
Sørensen Claus B.,
Johnson Erik,
Willmott Philip R.,
Feidenhans'l Robert
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881612
Subject(s) - reciprocal lattice , nanowire , materials science , diffractometer , bragg's law , semiconductor , optics , molecular beam epitaxy , crystal (programming language) , scattering , rod , resolution (logic) , bragg peak , condensed matter physics , crystallography , epitaxy , beam (structure) , optoelectronics , physics , nanotechnology , diffraction , chemistry , scanning electron microscope , medicine , alternative medicine , layer (electronics) , pathology , artificial intelligence , computer science , programming language
By combining a 2D PILATUS 100 K detector and a surface diffractometer, high‐resolution 3D reciprocal space maps with a resolution up to 2 × 10 −3 A −1 have been obtained, at an acquisition speed of 20 min per Bragg point. To illustrate the possibilities, the shape and facets of molecular beam epitaxy grown GaAs nanowires are identified by studying the diffuse scattering around Bragg points from the different crystal structures in the wires. The wires are bound by {111} facets from alternating domains with zincblende structure and its twin, creating a microfaceted wire with a hexagonal cross‐section.Isosurface of a [ $11\bar 1$ ] Bragg point from a GaAs nanowire with crystal truncation rods originating from the wires' microfacets.