Premium
Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates
Author(s) -
Saka T.,
Kato T.,
Jin X. G.,
Tanioku M.,
Ujihara T.,
Takeda Y.,
Yamamoto N.,
Nakagawa Y.,
Mano A.,
Okumi S.,
Yamamoto M.,
Nakanishi T.,
Horinaka H.,
Matsuyama T.,
Yasue T.,
Koshikawa T.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881608
Subject(s) - mosaicity , zigzag , materials science , anisotropy , substrate (aquarium) , layer (electronics) , crystallography , diffraction , condensed matter physics , optics , geometry , composite material , chemistry , physics , epitaxy , geology , oceanography , mathematics
The crystalline structure of GaAsP layers grown on GaAs and GaP (001) substrates, used for spin polarized photocathodes, has been investigated by X‐ray diffraction. The layers on the GaAs substrate possess a mosaic structure observable by X‐ray topography and consist of many large blocks. The mosaicity is anisotropic and the distribution of the mosaic is restricted within the (110) plane, and the blocks zigzag around the [110] direction. The layer grown on the GaP substrate was uniform and no mosaic was observed in the topographs. The results indicate that different mechanisms of strain release occur in GaAsP layers for tensile and compressive strains.