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Structural changes in Si crystals exposed to chemical etching and ion implantation
Author(s) -
Fodchuk I.,
Zaplitnyy R.,
Kazemirskiy T.,
Litvinchuk I.,
Swiatek Z.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881591
Subject(s) - isotropic etching , silicon , materials science , etching (microfabrication) , crystal (programming language) , dislocation , ion , ion implantation , diffraction , crystallography , scattering , molecular physics , analytical chemistry (journal) , chemistry , nanotechnology , optics , optoelectronics , layer (electronics) , composite material , physics , organic chemistry , chromatography , computer science , programming language
Results of X‐ray diffraction studies on structural changes in Si crystals caused by chemical etching for 40 s in HF, HNO 3 solution and phosphorus‐ion implantation with the energy E = 100 keV and dose D = 8 × 10 14 cm −2 are represented. Two‐ and three‐crystal X‐ray diffractometry methods are used for a quantitative assessment of structural changes occurring in the near‐surface crystal layers. Analysis of experimental rocking curves was made with the use of different approaches developed on the basis of kinematic and dynamic theory of X‐ray scattering in the imperfect crystals. A model of possible system of structural defects in the near‐surface silicon layers modified by chemical etching and ion implantation is proposed. The model accounts for the availability of respective sizes and concentrations of spherical and disc‐shaped cluster formations, dislocation loops.