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Interfacial roughness of Fe 3 Si/GaAs(001) films studied by X‐ray crystal truncation rods
Author(s) -
Kaganer Vladimir,
Jenichen Bernd,
Shayduk Roman,
Braun Wolfgang
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881584
Subject(s) - surface finish , rod , substrate (aquarium) , molecular beam epitaxy , surface roughness , crystal (programming language) , materials science , root mean square , thin film , condensed matter physics , truncation (statistics) , deposition (geology) , optics , epitaxy , nanotechnology , composite material , layer (electronics) , physics , mathematics , geology , medicine , paleontology , oceanography , alternative medicine , statistics , pathology , quantum mechanics , sediment , computer science , programming language
Crystal truncation rods (CTRs) from thin Fe 3 Si films grown on GaAs(001) by molecular beam epitaxy (MBE) are measured at different stages of deposition. The films do not develop their own surface roughness but are conformal to the substrate, so that the substrate roughness governs the whole system. A factor that describes the roughness of a zinc blende structure in the β model of terrace height probabilities is derived and applied to describe the experimental curves. We show that the β model adequately describes the CTRs while the model of continuous Gaussian fluctuations of the surface height notably underestimates the root‐mean‐squared (rms) roughness.