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UV photoreflectance spectroscopy in strained silicon on insulator structures
Author(s) -
Munguía Jacobo,
Bluet JeanMarie,
Chouaib Houssam,
Bremond Georges,
BruChevallier Catherine
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881404
Subject(s) - silicon , materials science , band gap , raman spectroscopy , direct and indirect band gaps , spectroscopy , strain (injury) , silicon on insulator , optoelectronics , optics , physics , medicine , quantum mechanics
The optical modulation technique of photoreflectance (PR) is applied on tensely‐strained silicon on insulator (sSOI) substrates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ‐point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ± 0.02% and 1.40 ± 0.03% of strain, respectively. The obtained deformation potential in the direct band gap ( a = –0.55 eV and b = –2.45 eV) are in good agreement with previously reported results for bulk material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)